GATE EE 2020 Set 1 — Question 30
Go beyond PYQs with Success TrackerAI-powered personalised practice and doubt support. Unlimited practice on eligible plans; AI usage limits apply.NAT+1 / -0MediumSwitching CharacteristicsPower Semiconductor DevicesPower ElectronicsFreewheeling Diode
Power Electronics → Power Semiconductor Devices → Freewheeling Diode
Last updated
Question
A double pulse measurement for an inductively loaded circuit controlled by the IGBT switch is carried out to evaluate the reverse recovery characteristics of the diode, D, represented approximately as a piecewise linear plot of current vs time at diode turn-off. is a parasitic inductance due to the wiring of the circuit, and is in series with the diode. The point on the plot (indicate your choice by entering 1, 2, 3 or 4) at which the IGBT experiences the highest current stress is __________.
Correct answer
3 to 3
Solution
In a double pulse test, when the IGBT turns on for the second time, the diode D undergoes reverse recovery. The current through the IGBT during this interval is the sum of the load current and the diode's reverse recovery current: . The peak current stress on the IGBT occurs when the diode's reverse recovery current reaches its negative peak. On the provided piecewise linear plot of diode current vs time, point 3 represents the peak reverse recovery current. Therefore, the IGBT experiences the highest current stress at point 3.
Continue learning with Success Tracker
A step still unclear? Work through it with support
Use Success Tracker to ask about the reasoning, then try another GATE EE question to check your understanding.
AI-powered practice· Unlimited practice on eligible plans
- PYQs with solutions
- Attempt available previous-year questions, then compare your reasoning with the worked solution. Coverage varies by stream.
- Practice that adapts
- Choose a topic, work on weaker areas and bookmark questions to revisit. Your attempts feed your progress tracking.
- AI doubt support
- Ask follow-up questions about a step or concept while practising, instead of stopping at the final answer.
Unlimited practice is available on eligible plans. Free practice and AI usage have limits; check the current plan allowances before choosing.
This page stays readable without an account. AI responses can be wrong; check them against the solution and source material.
More questions on Power Semiconductor Devices
2026 Set 1 Q27The figure shows a straight-line approximation for the forward characteristics of a power diode. A…2026 Set 1 Q28Consider the circuit shown in Figure (a). A gate pulse is applied between time instants …2026 Set 1 Q34Consider the circuit shown. Assume that the diode is ideal. The supply voltage…2026 Set 1 Q47Consider the single-phase voltage source inverter circuit feeding an inductive load (). Assume…2026 Set 1 Q48Consider the boost converter circuit shown. Assume that the semiconductor devices are ideal. In…