GATE EE 2020 Set 1 — Question 35
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Electromagnetic Fields → Electrostatics → Electric Flux & Gauss's Law
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Question
The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias of is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be . The total charge contained within the dashed box shown, upon application of bias, expressed as a multiple of (absolute value in Coulombs, rounded off to the nearest integer) is ______.
Correct answer
0 to 0
Solution
In a MOS structure, charge neutrality must be maintained. The total charge is the sum of the charge on the gate , the charge in the oxide , and the charge in the semiconductor . Thus, . The dashed box shown in the figure encloses the entire structure including the gate, the oxide layer, and the silicon substrate. Therefore, the net charge enclosed by the dashed box is zero. Expressed as a multiple of , the value is 0.
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