GATE EE 2022 Set 1 — Question 22
Go beyond PYQs with Success TrackerAI-powered personalised practice and doubt support. Unlimited practice on eligible plans; AI usage limits apply.MCQ+1 / -0.33EasyMOSFET & IGBT CharacteristicsPower Semiconductor DevicesPower ElectronicsSwitching Characteristics
Power Electronics → Power Semiconductor Devices → MOSFET & IGBT Characteristics
Last updated
Question
A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a switching frequency of 200 kHz. Which power device is best suited for this purpose?
Correct answer
(C) MOSFET
Solution
The question asks to identify the best-suited power device for a charger operating at a switching frequency of 200 kHz.Let's analyze the characteristics of the given power devices:
1.IGBT (Insulated Gate Bipolar Transistor): These devices are typically used for medium to high power applications and operate efficiently at switching frequencies up to tens of kHz. While they can operate at higher frequencies, their switching losses increase significantly, making them less ideal for very high frequencies.
2.Thyristor (SCR - Silicon Controlled Rectifier): Thyristors are primarily used for high power, low-frequency (line frequency) applications. Their switching speeds are relatively slow, making them unsuitable for high-frequency converters like a 200 kHz charger.
3.MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor): MOSFETs are known for their fast switching speeds and low switching losses at high frequencies. They are commonly used in high-frequency (hundreds of kHz to MHz) and low to medium power applications, such as laptop chargers, DC-DC converters, and switch-mode power supplies. Their low gate drive requirements and absence of minority carrier storage effects contribute to their excellent high-frequency performance.
4.BJT (Bipolar Junction Transistor): BJTs are older devices compared to MOSFETs and IGBTs. They have slower switching speeds and higher drive current requirements, making them less efficient and less suitable for high-frequency switching applications compared to MOSFETs.
Given the high switching frequency of 200 kHz, MOSFETs are the most appropriate choice due to their superior high-frequency switching capabilities and lower switching losses in this frequency range for the power levels typically associated with laptop chargers.The final answer is Continue learning with Success Tracker
A step still unclear? Work through it with support
Use Success Tracker to ask about the reasoning, then try another GATE EE question to check your understanding.
AI-powered practice· Unlimited practice on eligible plans
- PYQs with solutions
- Attempt available previous-year questions, then compare your reasoning with the worked solution. Coverage varies by stream.
- Practice that adapts
- Choose a topic, work on weaker areas and bookmark questions to revisit. Your attempts feed your progress tracking.
- AI doubt support
- Ask follow-up questions about a step or concept while practising, instead of stopping at the final answer.
Unlimited practice is available on eligible plans. Free practice and AI usage have limits; check the current plan allowances before choosing.
This page stays readable without an account. AI responses can be wrong; check them against the solution and source material.
More questions on Power Semiconductor Devices
2026 Set 1 Q27The figure shows a straight-line approximation for the forward characteristics of a power diode. A…2026 Set 1 Q28Consider the circuit shown in Figure (a). A gate pulse is applied between time instants …2026 Set 1 Q34Consider the circuit shown. Assume that the diode is ideal. The supply voltage…2026 Set 1 Q47Consider the single-phase voltage source inverter circuit feeding an inductive load (). Assume…2026 Set 1 Q48Consider the boost converter circuit shown. Assume that the semiconductor devices are ideal. In…