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GATE EC 2016 Set 2 — Question 48

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NAT+2 / -0HardAutocorrelation & PSDRandom ProcessesCommunicationsLine CodingSource Coding & Baseband Transmission

Communications → Random Processes → Autocorrelation & PSD

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Question

Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of VGSV_{GS} and VDSV_{DS}. Given,gm=0.5 μA/Vg_m = 0.5\ \mu\text{A/V} for VDS=50V_{DS} = 50 mV and VGS=2V_{GS} = 2 V,gd=8 μA/Vg_d = 8\ \mu\text{A/V} for VGS=2V_{GS} = 2 V and VDS=0V_{DS} = 0 V,
where gm=∂ID∂VGSg_m = \dfrac{\partial I_D}{\partial V_{GS}} and gd=∂ID∂VDSg_d = \dfrac{\partial I_D}{\partial V_{DS}}The threshold voltage (in volts) of the transistor is ________
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