GATE EC 2016 Set 2 — Question 47

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NAT+2 / -0MediumBode PlotsFrequency-Domain AnalysisControl Systems

Control Systems → Frequency-Domain Analysis → Bode Plots

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Question

Consider a region of silicon devoid of electrons and holes, with an ionized donor density of Nd+=1017 cm−3N_d^+ = 10^{17}\ \text{cm}^{-3}. The electric field at x=0x = 0 is 00 V/cm and the electric field at x=Lx = L is 5050 kV/cm in the positive xx direction. Assume that the electric field is zero in the yy and zz directions at all points.
📷 Figure: Hatched silicon region with uniform ionized donor density N_d+ = 10^17 cm^-3, with positions x = 0 (left edge) and x = L marked
Given q=1.6×10−19q = 1.6 \times 10^{-19} coulomb, ϵ0=8.85×10−14\epsilon_0 = 8.85 \times 10^{-14} F/cm, ϵr=11.7\epsilon_r = 11.7 for silicon, the value of LL in nm is ________
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