GATE EC 2026 Set 1 — Question 25

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MSQ+1 / -0MediumForward & Reverse BiasP-N Junction & DiodesElectronic DevicesFermi Level & DopingSemiconductor Physics

Electronic Devices → P-N Junction & Diodes → Fermi Level & Doping

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Question

Consider a p-n junction diode when it is forward biased with 2 V.
Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, EfnE_{fn} in the n-side and EfpE_{fp} in the p-side?
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