GATE EC 2026 Set 1 — Question 25
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Electronic Devices → P-N Junction & Diodes → Fermi Level & Doping
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Question
Consider a p-n junction diode when it is forward biased with 2 V. Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, in the n-side and in the p-side?
Correct answer
(A) 2 eV
Solution
In a forward-biased p-n junction, the separation between the quasi-Fermi levels is given by the relation:where is the applied forward bias voltage and is the elementary charge.
Given , the energy difference is:Note that energy is measured in electron-volts (eV), whereas potential is measured in Volts (V). Therefore, option (A) is the only correct choice with the proper units and magnitude.
Given , the energy difference is:Note that energy is measured in electron-volts (eV), whereas potential is measured in Volts (V). Therefore, option (A) is the only correct choice with the proper units and magnitude.
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