GATE EE 2017 Set 1 — Question 15

MCQ+1 / -0.33EasyPower Semiconductor DevicesPower Electronics

Power Electronics → Power Semiconductor Devices

Last updated 5 September 2026

Question

For the power semiconductor devices IGBT, MOSFET, Diode and Thyristor, which one of the following statements is TRUE?

Correct answer (D) MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices. Solution MOSFET is a majority carrier device . Its operation depends only on the flow of majority carriers (electrons in n-channel). IGBT is a minority carrier device . It uses conductivity modulation where minority carriers are injected into the drift region to reduce on-state resistance. Power Diode is a minority carrier device due to conductivity modulation in the drift region during forward bias. Thyristor is a minority carrier device as its operation involves the injection of minority carriers across multiple p-n junctions. Therefore, statement (D) is correct. Turn this into a strength. Explore AI-powered practice and doubt support with Success Tracker.

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Correct answer (D) MOSFET is majority carrier device, whereas IGBT, Diode, Thyristor are minority carrier devices. Solution MOSFET is a majority carrier device . Its operation depends only on the flow of majority carriers (electrons in n-channel). IGBT is a minority carrier device . It uses conductivity modulation where minority carriers are injected into the drift region to reduce on-state resistance. Power Diode is a minority carrier device due to conductivity modulation in the drift region during forward bias. Thyristor is a minority carrier device as its operation involves the injection of minority carriers across multiple p-n junctions. Therefore, statement (D) is correct.

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