GATE EE 2020 Set 1 — Question 40

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MCQ+2 / -0.67MediumP-N Junction DiodeDiode CircuitsAnalog & Digital ElectronicsMaximum Power TransferNetwork TheoremsElectric Circuits

Analog & Digital Electronics → Diode Circuits → Maximum Power Transfer

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Question

Consider the diode circuit shown below. The diode, DD, obeys the current-voltage characteristic ID=IS(exp(VDnVT)1)I_D = I_S \left(\exp\left(\frac{V_D}{nV_T}\right) - 1\right), where n>1n > 1, VT>0V_T > 0, VDV_D is the voltage across the diode and IDI_D is the current through it. The circuit is biased so that voltage, V>0V > 0 and current, I<0I < 0. If you had to design this circuit to transfer maximum power from the current source (I1I_1) to a resistive load (not shown) at the output, what values of R1R_1 and R2R_2 would you choose?
A circuit diagram showing a current source $I_1$ in parallel with a diode $D$ and a resistor $R_2$, followed by a series resistor $R_1$ leading to output terminals with voltage $V$ and current $I$.
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