GATE EC 2014 Set 2 — Question 20

MCQ+1 / -0.33MediumCMOS DevicesMOS Capacitor & MOSFETElectronic Devices

Electronic Devices → MOS Capacitor & MOSFET → CMOS Devices

Last updated 5 September 2026

Question

In CMOS technology, shallow P-well or N-well regions can be formed using

Correct answer (D) low energy ion-implantation Solution Ion implantation is the standard method for creating wells in CMOS technology because it allows for precise control of dopant concentration and depth, which is essential for forming shallow well regions. Turn this into a strength. Explore AI-powered practice and doubt support with Success Tracker.

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Correct answer (D) low energy ion-implantation Solution Ion implantation is the standard method for creating wells in CMOS technology because it allows for precise control of dopant concentration and depth, which is essential for forming shallow well regions.

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