GATE EC 2014 Set 3 — Question 18

MCQ+1 / -0.33MediumMOSFET Structure & OperationMOS Capacitor & MOSFETElectronic Devices

Electronic Devices → MOS Capacitor & MOSFET → MOSFET Structure & Operation

Last updated 5 September 2026

Question

In MOSFET fabrication, the channel length is defined during the process of

Correct answer (C) poly-silicon gate patterning Solution In standard CMOS fabrication, the gate (usually poly-silicon) is patterned first. This gate then serves as a mask for the subsequent source and drain ion implantation steps. This is known as a self-aligned process. Therefore, the dimensions of the patterned poly-silicon gate directly define the channel length of the MOSFET. Hence, the correct option is (C). Turn this into a strength. Explore AI-powered practice and doubt support with Success Tracker.

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Correct answer (C) poly-silicon gate patterning Solution In standard CMOS fabrication, the gate (usually poly-silicon) is patterned first. This gate then serves as a mask for the subsequent source and drain ion implantation steps. This is known as a self-aligned process. Therefore, the dimensions of the patterned poly-silicon gate directly define the channel length of the MOSFET. Hence, the correct option is (C).

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