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GATE EC 2014 Set 3 — Question 44

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MCQ+2 / -0.67MediumBuilt-In PotentialP-N Junction & DiodesElectronic DevicesJunction Formation & Depletion

Electronic Devices → P-N Junction & Diodes → Built-In Potential

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Question

The donor and accepter impurities in an abrupt junction silicon diode are 1×1016 cm−31 \times 10^{16} \text{ cm}^{-3} and 5×1018 cm−35 \times 10^{18} \text{ cm}^{-3}, respectively. Assume that the intrinsic carrier concentration in silicon ni=1.5×1010 cm−3n_i = 1.5 \times 10^{10} \text{ cm}^{-3} at 300 K, kTq=26 mV\frac{kT}{q} = 26 \text{ mV} and the permittivity of silicon ϵsi=1.04×10−12 F/cm\epsilon_{si} = 1.04 \times 10^{-12} \text{ F/cm}. The built-in potential and the depletion width of the diode under thermal equilibrium conditions, respectively, are
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