GATE EC 2014 Set 3 — Question 46

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NAT+2 / -0MediumMOS Capacitor (Accum, Depl, Inv)MOS Capacitor & MOSFETElectronic Devices

Electronic Devices → MOS Capacitor & MOSFET → MOS Capacitor (Accum, Depl, Inv)

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An ideal MOS capacitor has boron doping-concentration of 1015 cm310^{15} \text{ cm}^{-3} in the substrate. When a gate voltage is applied, a depletion region of width 0.5 \mum0.5 \text{ \mu m} is formed with a surface (channel) potential of 0.2 V0.2 \text{ V}. Given that ϵ0=8.854×1014 F/cm\epsilon_0 = 8.854 \times 10^{-14} \text{ F/cm} and the relative permittivities of silicon and silicon dioxide are 12 and 4, respectively, the peak electric field (in V/μ\mu m) in the oxide region is ____________.
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