GATE EC 2015 Set 2 — Question 20

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NAT+1 / -0MediumMobility, Resistivity & ConductivityCarrier TransportElectronic Devices

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A piece of silicon is doped uniformly with phosphorous with a doping concentration of 1016/cm310^{16}/\text{cm}^3. The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. The charge of an electron is 1.6×1019 C1.6 \times 10^{-19} \text{ C}. The conductivity (in S cm1\text{S cm}^{-1}) of the silicon sample at 300 K300 \text{ K} is ______.
Graph of Hole and Electron Mobility in Silicon at 300 K
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