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GATE EC 2015 Set 2 — Question 43

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NAT+2 / -0MediumDiffusion & Drift CurrentCarrier TransportElectronic DevicesMobility, Resistivity & Conductivity

Electronic Devices → Carrier Transport → Diffusion & Drift Current

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Question

A dc voltage of 10 V10 \text{ V} is applied across an n-type silicon bar having a rectangular cross-section and a length of 1 cm1 \text{ cm} as shown in figure.
A rectangular n-Si bar of length 1 cm connected to a 10 V DC source
The donor doping concentration NDN_D and the mobility of electrons μn\mu_n are 1016 cm−310^{16} \text{ cm}^{-3} and 1000 cm2V−1s−11000 \text{ cm}^2\text{V}^{-1}\text{s}^{-1}, respectively. The average time (in μs\mu\text{s}) taken by the electrons to move from one end of the bar to other end is _________.
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