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GATE EC 2017 Set 1 — Question 10

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MCQ+2 / -0.67MediumBuilt-In PotentialP-N Junction & DiodesElectronic Devices

Electronic Devices → P-N Junction & Diodes → Built-In Potential

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Question

An n+−nn^{+}-n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of ND1=1×1018 cm−3N_{D1} = 1 \times 10^{18} \text{ cm}^{-3} and ND2=1×1015 cm−3N_{D2} = 1 \times 10^{15} \text{ cm}^{-3} corresponding to the n+n^{+} and nn regions respectively. At the operational temperature TT, assume complete impurity ionization, kT/q=25 mVkT/q = 25 \text{ mV}, and intrinsic carrier concentration to be ni=1×1010 cm−3n_i = 1 \times 10^{10} \text{ cm}^{-3}. What is the magnitude of the built-in potential of this device?
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