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GATE EC 2021 Set 1 — Question 54

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NAT+2 / -0MediumCutoff, Triode & SaturationMOS Capacitor & MOSFETElectronic DevicesBiasing & DC Operating PointBJT & MOSFET AmplifiersAnalog Circuits

Analog Circuits → BJT & MOSFET Amplifiers → Biasing & DC Operating Point

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Question

For the transistor M1M_1 in the circuit shown in the figure, μnCox=100 μA/V2\mu_n C_{ox} = 100\text{ }\mu\text{A/V}^2 and (W/L)=10(W/L) = 10, where μn\mu_n is the mobility of electron, CoxC_{ox} is the oxide capacitance per unit area, WW is the width and LL is the length.
MOSFET circuit with $V_{DD} = 3\text{ V}$, $R_D = 20\text{ k}\Omega$, and $V_{GS}$
The channel length modulation coefficient is ignored. If the gate-to-source voltage VGSV_{GS} is 1 V1\text{ V} to keep the transistor at the edge of saturation, then the threshold voltage of the transistor (rounded off to one decimal place) is ________ V.
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