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GATE EC 2022 Set 1 — Question 34

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NAT+1 / -0MediumMOS Capacitor (Accum, Depl, Inv)MOS Capacitor & MOSFETElectronic Devices

Electronic Devices → MOS Capacitor & MOSFET → MOS Capacitor (Accum, Depl, Inv)

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Question

An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with VG=2 VV_G = 2\text{ V}. The corresponding inversion charge density (QINQ_{IN}) is 2.2 μC/cm22.2\text{ }\mu\text{C/cm}^2. Assume oxide capacitance per unit area as COX=1.7 μF/cm2C_{OX} = 1.7\text{ }\mu\text{F/cm}^2. For VG=4 VV_G = 4\text{ V}, the value of QINQ_{IN} is ______ μC/cm2\mu\text{C/cm}^2 (rounded off to one decimal place).
Diagram of an ideal MOS capacitor showing Metal, Oxide, and Semiconductor layers with gate voltage $V_G$
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