GATE EC 2022 Set 1 — Question 40
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Electronic Devices → MOS Capacitor & MOSFET → I-V & Transconductance
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Question
Consider an ideal long channel nMOSFET (enhancement-mode) with gate length and width . The product of electron mobility () and oxide capacitance per unit area () is . The threshold voltage of the transistor is . For a gate-to-source voltage and drain-to-source voltage (substrate connected to the source), the maximum value of the drain-to-source current is _________.
Correct answer
(C) 15 mA
Solution
, so . ranges from V to V, so the overdrive ranges from to V. The drain current increases monotonically with , so the maximum occurs at V ( V).At that instant , so the device is in the linear (triode) region:(Using the saturation formula mA would be wrong, since the device is not saturated; 40 mA and 5 mA come from other formula errors.)Answer: (C) 15 mA
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