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GATE EC 2026 Set 1 — Question 50

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MCQ+2 / -0.67HardSmall-Signal & Hybrid-Pi ModelBJT & MOSFET AmplifiersAnalog CircuitsCE, CB & CC ConfigurationsMidband Gain & Resistances

Analog Circuits → BJT & MOSFET Amplifiers → CE, CB & CC Configurations

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Question

A small signal source, Vi(t)=Acos⁡(105t)+Bsin⁡(107t)V_i(t) = A \cos(10^5 t) + B \sin(10^7 t) is applied to a BJT circuit as shown in the Figure.
Assume zero source resistance, VBE=0.7 VV_{BE} = 0.7\text{ V}, βdc=99\beta_{dc} = 99, Early voltage =100 V= 100\text{ V} and Thermal voltage =25 mV= 25\text{ mV}. Effect of internal parasitic capacitances of the BJT may be neglected.
Which expression is the best approximation of the output voltage Vo(t)V_o(t)?
A BJT common-emitter amplifier circuit with voltage divider bias (100k and 25k), collector resistor (5k), and emitter resistors (500 ohm and 1k). A 10uF bypass capacitor is across the 1k resistor. Input Vi(t) is coupled via 100nF, and output Vo(t) is taken from the collector via 100nF.
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