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GATE EC 2026 Set 1 — Question 64

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NAT+2 / -0MediumDiffusion & Drift CurrentCarrier TransportElectronic DevicesEinstein Relation

Electronic Devices → Carrier Transport → Diffusion & Drift Current

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Question

Consider that the concentration of electrons in a semiconductor bar varies linearly from 2×1017 cm−32 \times 10^{17} \text{ cm}^{-3} at x=1μmx = 1 \mu\text{m} to 1×1016 cm−31 \times 10^{16} \text{ cm}^{-3} at x=4μmx = 4 \mu\text{m} along the xx-direction. Assume that the concentration of electrons is not varying along other directions (that is along yy- and zz-directions).
[Given: the mobility of electron is 1400 cm2V−1s−11400 \text{ cm}^2\text{V}^{-1}\text{s}^{-1}, thermal voltage is 25 mV25 \text{ mV} and electronic charge is 1.6×10−19 Coulomb1.6 \times 10^{-19} \text{ Coulomb}.]
The density of electron diffusion current (in A/mm2\text{A/mm}^2) is ________.
(rounded off to two decimal places)
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