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GATE EC 2014 Set 2 — Question 44

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NAT+2 / -0EasyDiffusion & Drift CurrentCarrier TransportElectronic DevicesEinstein Relation

Electronic Devices → Carrier Transport → Diffusion & Drift Current

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Question

Assume electronic charge q=1.6×10−19 Cq = 1.6 \times 10^{-19}\text{ C}, kT/q=25 mVkT/q = 25\text{ mV} and electron mobility μn=1000 cm2/V-s\mu_n = 1000\text{ cm}^2/\text{V-s}. If the concentration gradient of electrons injected into a P-type silicon sample is 1×1021/cm41 \times 10^{21}/\text{cm}^4, the magnitude of electron diffusion current density (in A/cm2\text{A/cm}^2) is _________.
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