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GATE EC 2014 Set 2 — Question 45

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NAT+2 / -0MediumJunction Formation & DepletionP-N Junction & DiodesElectronic Devices

Electronic Devices → P-N Junction & Diodes → Junction Formation & Depletion

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Question

Consider an abrupt PN junction (at T=300 KT = 300\text{ K}) shown in the figure. The depletion region width XnX_n on the N-side of the junction is 0.2 μm0.2\text{ }\mu\text{m} and the permittivity of silicon (ϵsi\epsilon_{si}) is 1.044×10−12 F/cm1.044 \times 10^{-12}\text{ F/cm}. At the junction, the approximate value of the peak electric field (in kV/cm\text{kV/cm}) is _________.
Diagram of an abrupt PN junction showing $P^+$-region with $N_A \gg N_D$ and $N$-region with $N_D = 10^{16}/\text{cm}^3$, and depletion width $X_n$
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