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GATE EC 2014 Set 2 — Question 46

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MCQ+2 / -0.67MediumJunction Formation & DepletionP-N Junction & DiodesElectronic Devices

Electronic Devices → P-N Junction & Diodes → Junction Formation & Depletion

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When a silicon diode having a doping concentration of NA=9×1016 cm−3N_A = 9 \times 10^{16}\text{ cm}^{-3} on p-side and ND=1×1016 cm−3N_D = 1 \times 10^{16}\text{ cm}^{-3} on n-side is reverse biased, the total depletion width is found to be 3 μm3\text{ }\mu\text{m}. Given that the permittivity of silicon is 1.04×10−12 F/cm1.04 \times 10^{-12}\text{ F/cm}, the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are
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