GATE EC 2014 Set 3 — Question 50
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Digital Circuits → Semiconductor Memories → SRAM & DRAM
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Question
If is the Word Line and the Bit Line, an SRAM cell is shown in
Correct answer
(B) [figure]
Solution
A standard 6T SRAM cell consists of two cross-coupled CMOS inverters and two NMOS access transistors.
1.Cross-coupled Inverters: The storage element is formed by two inverters where the output of one is connected to the input of the other. This creates a stable latching mechanism to store a single bit.
2.Access Transistors: Two NMOS transistors act as switches to connect the internal storage nodes to the external bit lines. The gates of these transistors are controlled by the Word Line ().
3.Bit Lines: The access transistors connect the storage nodes to the Bit Line () and its complement ().
Evaluating the options:- In (A), the access transistors are connected to the gates of the inverters. While logically part of the same node in a cross-coupled pair, standard schematic representations and physical layouts connect the access transistors to the output/drain nodes of the inverters.
- In (B), the access transistors are correctly connected to the outputs of the inverters (the storage nodes). This is the standard and correct representation of a 6T SRAM cell.
- In (C) and (D), the cross-coupling is incorrect (e.g., outputs connected to outputs or gates connected to gates), which would not form a functional latch.
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