GATE EC 2014 Set 4 — Question 44

Go beyond PYQs with Success TrackerAI-powered personalised practice and doubt support. Unlimited practice on eligible plans; AI usage limits apply.
NAT+2 / -0EasyEquilibrium Carrier ConcentrationSemiconductor PhysicsElectronic Devices

Electronic Devices → Semiconductor Physics → Equilibrium Carrier Concentration

Last updated

Question

Consider a silicon sample doped with ND=1×1015/cm3N_D = 1 \times 10^{15}/\text{cm}^3 donor atoms. Assume that the intrinsic carrier concentration ni=1.5×1010/cm3n_i = 1.5 \times 10^{10}/\text{cm}^3. If the sample is additionally doped with NA=1×1018/cm3N_A = 1 \times 10^{18}/\text{cm}^3 acceptor atoms, the approximate number of electrons/cm3\text{cm}^3 in the sample, at T=300T=300 K, will be ______.
Your answer

Enter a number. Decimals, negative values and scientific notation are accepted.

The solution stays hidden until you check.

Continue learning with Success Tracker

A step still unclear? Work through it with support

Use Success Tracker to ask about the reasoning, then try another GATE EC question to check your understanding.

AI-powered practice· Unlimited practice on eligible plans
PYQs with solutions
Attempt available previous-year questions, then compare your reasoning with the worked solution. Coverage varies by stream.
Practice that adapts
Choose a topic, work on weaker areas and bookmark questions to revisit. Your attempts feed your progress tracking.
AI doubt support
Ask follow-up questions about a step or concept while practising, instead of stopping at the final answer.

Unlimited practice is available on eligible plans. Free practice and AI usage have limits; check the current plan allowances before choosing.

This page stays readable without an account. AI responses can be wrong; check them against the solution and source material.

More questions on Semiconductor Physics