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GATE EC 2014 Set 4 — Question 45

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NAT+2 / -0MediumEbers-Moll ModelBJTElectronic DevicesStructure & Operation

Electronic Devices → BJT → Ebers-Moll Model

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Question

Consider two BJTs biased at the same collector current with area A1=0.2μm×0.2μmA_1 = 0.2 \mu\text{m} \times 0.2 \mu\text{m} and A2=300μm×300μmA_2 = 300 \mu\text{m} \times 300 \mu\text{m}. Assuming that all other device parameters are identical, kT/q=26 mVkT/q = 26 \text{ mV}, the intrinsic carrier concentration is 1×1010 cm−31 \times 10^{10} \text{ cm}^{-3}, and q=1.6×10−19 Cq = 1.6 \times 10^{-19} \text{ C}, the difference between the base-emitter voltages (in mV) of the two BJTs (i.e., VBE1−VBE2V_{BE1} - V_{BE2}) is _____.
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