GATE EC 2015 Set 1 — Question 19
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Electronic Devices → P-N Junction & Diodes
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Question
A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
Correct answer
(A) both the P-region and the N-region are heavily doped
Solution
A tunnel diode exhibits negative differential resistance. This phenomenon occurs when both the p-type and n-type regions of a PN junction are very heavily doped (degenerate doping). This heavy doping results in a very narrow depletion region, which allows for quantum mechanical tunneling of electrons across the junction at low forward bias voltages, creating the characteristic negative resistance region.
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