GATE EC 2015 Set 1 — Question 20
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Electronic Devices → Carrier Transport → Mobility, Resistivity & Conductivity
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Question
A silicon sample is uniformly doped with donor type impurities with a concentration of . The electron and hole mobilities in the sample are and respectively. Assume complete ionization of impurities. The charge of an electron is . The resistivity of the sample (in ) is ______.
Correct answer
0.5 to 0.54
Solution
Given:
Donor concentration
Electron mobility
Hole mobility
Charge of electron For an n-type semiconductor with complete ionization:
Electron concentration
Since , the conductivity is dominated by electrons:Resistivity is the reciprocal of conductivity:The value lies within the range 0.50 to 0.54.
Donor concentration
Electron mobility
Hole mobility
Charge of electron For an n-type semiconductor with complete ionization:
Electron concentration
Since , the conductivity is dominated by electrons:Resistivity is the reciprocal of conductivity:The value lies within the range 0.50 to 0.54.
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