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GATE EC 2016 Set 1 — Question 46

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NAT+2 / -0HardJunction Formation & DepletionP-N Junction & DiodesElectronic DevicesBuilt-In Potential

Electronic Devices → P-N Junction & Diodes → Built-In Potential

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Question

Consider a silicon p-n junction with a uniform acceptor doping concentration of 1017 cm−310^{17} \text{ cm}^{-3} on the p-side and a uniform donor doping concentration of 1016 cm−310^{16} \text{ cm}^{-3} on the n-side. No external voltage is applied to the diode. Given: kT/q=26 mVkT/q = 26 \text{ mV}, ni=1.5×1010 cm−3n_i = 1.5 \times 10^{10} \text{ cm}^{-3}, ϵSi=12ϵ0\epsilon_{Si} = 12\epsilon_0, ϵ0=8.85×10−14 F/m\epsilon_0 = 8.85 \times 10^{-14} \text{ F/m}, and q=1.6×10−19 Cq = 1.6 \times 10^{-19} \text{ C}.
The charge per unit junction area (nC cm−2\text{nC cm}^{-2}) in the depletion region on the p-side is ___________
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