GATE EC 2016 Set 1 — Question 47

NAT+2 / -0MediumI-V & TransconductanceMOS Capacitor & MOSFETElectronic DevicesBody Effect & Channel Modulation

Electronic Devices → MOS Capacitor & MOSFET → Body Effect & Channel Modulation

Last updated 5 September 2026

Question

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I_D = \frac{1}{2} \mu_n C_{ox} \frac{W}{L} (V_{GS} - V_T)^2 (1 + \lambda V_{DS})

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I_D = \frac{1}{2} \mu_n C_{ox} \frac{W}{L} (V_{GS} - V_T)^2 (1 + \lambda V_{DS})

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