GATE EC 2016 Set 2 — Question 46
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Electronic Devices → P-N Junction & Diodes → Zener & Avalanche Breakdown
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Question
Consider avalanche breakdown in a silicon junction. The -region is uniformly doped with a donor density . Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field . Assume to be independent of . If the built-in voltage of the junction is much smaller than the breakdown voltage, , the relationship between and is given by
Correct answer
(C) N_D × V_(BR) = constant
Solution
For a one-sided junction, the maximum electric field occurs at the metallurgical junction and is given by:
At breakdown, and . Given , we have:
Squaring both sides:
Since , , and are constants, the product must be constant:
At breakdown, and . Given , we have:
Squaring both sides:
Since , , and are constants, the product must be constant:
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