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GATE EC 2016 Set 3 — Question 47

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NAT+2 / -0MediumStructure & OperationBJTElectronic DevicesDiffusion & Drift CurrentCarrier Transport

Electronic Devices → BJT → Diffusion & Drift Current

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Question

The injected excess electron concentration profile in the base region of an npn BJT, biased in the active region, is linear, as shown in the figure. If the area of the emitter-base junction is 0.001 cm20.001\text{ cm}^2, μn=800 cm2/(V-s)\mu_n = 800\text{ cm}^2/(\text{V-s}) in the base region and depletion layer widths are negligible, then the collector current ICI_C (in mA) at room temperature is __________
(Given: thermal voltage VT=26 mVV_T = 26\text{ mV} at room temperature, electronic charge q=1.6×10−19 Cq = 1.6 \times 10^{-19}\text{ C})
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