GATE EC 2017 Set 1 — Question 36
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Electronic Devices → Carrier Transport → Diffusion & Drift Current
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Question
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below: the drift velocity (in cm/s) increases linearly from 0 to cm/s as the field increases from 0 to V/cm, and stays constant at cm/s for higher fields. The semiconductor has a uniform electron concentration of and electronic charge . If a bias of is applied across a region of this semiconductor, the resulting current density in this region, in , is ________.
Correct answer
1.5 to 1.7
Solution
Field: V/cm, which is below the V/cm breakpoint, so we are on the linear part.Mobility (slope): , so cm/s.Answer: 1.6
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