GATE EC 2017 Set 1 — Question 36

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NAT+2 / -0MediumDiffusion & Drift CurrentCarrier TransportElectronic Devices

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The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n=1×1016 cm3n = 1 \times 10^{16} \text{ cm}^{-3} and electronic charge q=1.6×1019 Cq = 1.6 \times 10^{-19} \text{ C}. If a bias of 5 V5 \text{ V} is applied across a 1 \mum1 \text{ \mu m} region of this semiconductor, the resulting current density in this region, in kA/cm2\text{kA/cm}^2, is ________.
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