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GATE EC 2017 Set 1 — Question 37

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NAT+2 / -0HardDiffusion & Drift CurrentCarrier TransportElectronic DevicesGeneration & Recombination

Electronic Devices → Carrier Transport → Diffusion & Drift Current

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Question

As shown, a uniformly doped Silicon (Si) bar of length L=0.1μmL = 0.1 \mu m with a donor concentration ND=1016cm−3N_D = 10^{16} cm^{-3} is illuminated at x=0x = 0 such that electron and hole pairs are generated at the rate of GL=GL0(1−xL),0≤x≤LG_L = G_{L0} (1 - \frac{x}{L}), 0 \leq x \leq L, where GL0=1017cm−3s−1G_{L0} = 10^{17} cm^{-3}s^{-1}. Hole lifetime is 10−4s10^{-4} s, electronic charge q=1.6×10−19Cq = 1.6 \times 10^{-19} C, hole diffusion coefficient Dp=100cm2/sD_p = 100 cm^2/s and low level injection condition prevails. Assuming a linearly decaying steady state excess hole concentration that goes to 0 at x=Lx = L, the magnitude of the diffusion current density at x=L/2x = L/2, in A/cm2A/cm^2, is ________.
Silicon bar with light illumination and coordinate system
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