GATE EC 2017 Set 1 — Question 38

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NAT+2 / -0MediumDepletion & Diffusion CapacitanceP-N Junction & DiodesElectronic Devices

Electronic Devices → P-N Junction & Diodes → Depletion & Diffusion Capacitance

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Question

As shown, two Silicon (Si) abrupt pp-nn junction diodes are fabricated with uniform donor doping concentrations of ND1=1014 cm3N_{D1} = 10^{14}\ \text{cm}^{-3} and ND2=1016 cm3N_{D2} = 10^{16}\ \text{cm}^{-3} in the nn-regions, and uniform acceptor doping concentrations of NA1=1014 cm3N_{A1} = 10^{14}\ \text{cm}^{-3} and NA2=1016 cm3N_{A2} = 10^{16}\ \text{cm}^{-3} in the pp-regions of the diodes, respectively. Assuming that the reverse bias voltage is \gg built-in potentials of the diodes, the ratio C2/C1C_2/C_1 of their reverse bias capacitances for the same applied reverse bias, is ________.
Diagrams of Diode 1 and Diode 2 showing doping concentrations in p and n regions
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