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GATE EC 2017 Set 2 — Question 11

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NAT+1 / -0MediumI-V & TransconductanceMOS Capacitor & MOSFETElectronic Devices

Electronic Devices → MOS Capacitor & MOSFET → I-V & Transconductance

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Question

Consider an nn-channel MOSFET having width WW, length LL, electron mobility in the channel μn\mu_n and oxide capacitance per unit area CoxC_{ox}. If gate-to-source voltage VGS=0.7 VV_{GS} = 0.7\text{ V}, drain-to-source voltage VDS=0.1 VV_{DS} = 0.1\text{ V}, (μnCox)=100 μA/V2(\mu_n C_{ox}) = 100\text{ }\mu\text{A/V}^2, threshold voltage VTH=0.3 VV_{TH} = 0.3\text{ V} and (W/L)=50(W/L) = 50, then the transconductance gmg_m (in mA/V) is __________.
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