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GATE EC 2017 Set 2 — Question 36

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NAT+2 / -0HardMOS Capacitor (Accum, Depl, Inv)MOS Capacitor & MOSFETElectronic DevicesThreshold Voltage

Electronic Devices → MOS Capacitor & MOSFET → MOS Capacitor (Accum, Depl, Inv)

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A MOS capacitor is fabricated on p-type Si (Silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV. Ec−EF=0.9E_c - E_F = 0.9 eV, where EcE_c and EFE_F are the conduction band minimum and the Fermi energy levels of Si, respectively. Oxide ϵr=3.9\epsilon_r = 3.9, ϵ0=8.85×10−14\epsilon_0 = 8.85 \times 10^{-14} F/cm, oxide thickness tox=0.1t_{ox} = 0.1 μ\mu m and electronic charge q=1.6×10−19q = 1.6 \times 10^{-19} C. If the measured flat band voltage of this capacitor is −1-1 V, then the magnitude of the fixed charge at the oxide-semiconductor interface, in nC/cm2^2, is
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