GATE EC 2017 Set 2 — Question 37

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NAT+2 / -0MediumSolar Cell Efficiency & ResponsivityOptoelectronic DevicesElectronic Devices

Electronic Devices → Optoelectronic Devices → Solar Cell Efficiency & Responsivity

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Question

For a particular intensity of incident light on a silicon pnpn junction solar cell, the photocurrent density (JLJ_L) is 2.5 mA/cm22.5 \text{ mA/cm}^2 and the open-circuit voltage (VocV_{oc}) is 0.451 V0.451 \text{ V}. Consider thermal voltage (VTV_T) to be 25 mV25 \text{ mV}. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, VocV_{oc} (in volts) will be
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