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GATE EC 2018 Set 1 — Question 55

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NAT+2 / -0MediumBuilt-In PotentialP-N Junction & DiodesElectronic Devices

Electronic Devices → P-N Junction & Diodes → Built-In Potential

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Question

A junction is made between p−p^- Si with doping density NA1=1015 cm−3N_{A1} = 10^{15}\text{ cm}^{-3} and pp Si with doping density NA2=1017 cm−3N_{A2} = 10^{17}\text{ cm}^{-3}.
Given: Boltzmann constant k=1.38×10−23 J⋅K−1k = 1.38 \times 10^{-23}\text{ J}\cdot\text{K}^{-1}, electronic charge q=1.6×10−19 Cq = 1.6 \times 10^{-19}\text{ C}. Assume 100%100\% acceptor ionization.
At room temperature (T=300KT = 300\text{K}), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be _________________.
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