GATE EC 2019 Set 1 — Question 20
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Electronic Devices → MOS Capacitor & MOSFET → C-V Characteristics
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Question
The figure shows the high-frequency C-V curve of a MOS capacitor (at T = 300 K) with V and no oxide charges. The flat-band, inversion, and accumulation conditions are represented, respectively, by the points. (In the figure, P lies on the high-capacitance plateau at large negative , Q is where the curve crosses , and R lies on the low-capacitance plateau at large positive .)
Correct answer
(B) Q, R, P
Solution
With and no oxide charge, . Capacitance falls as becomes positive, so the substrate is p-type.
- Accumulation: a large negative draws holes to the surface, and (maximum). This is P.
- Flat band: . This is Q.
- Inversion: a large positive forms an electron inversion layer. At high frequency the capacitance stays at its minimum. This is R.
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