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GATE EC 2020 Set 1 — Question 42

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MCQ+2 / -0.67HardMOS Capacitor (Accum, Depl, Inv)MOS Capacitor & MOSFETElectronic DevicesThreshold Voltage

Electronic Devices → MOS Capacitor & MOSFET → MOS Capacitor (Accum, Depl, Inv)

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The band diagram of a pp-type semiconductor with a band-gap of 1 eV1\text{ eV} is shown. Using this semiconductor, a MOS capacitor having VTHV_{TH} of −0.16 V-0.16\text{ V}, Cox′C'_{ox} of 100 nF/cm2100\text{ nF/cm}^2 and a metal work function of 3.87 eV3.87\text{ eV} is fabricated. There is no charge within the oxide. If the voltage across the capacitor is VTHV_{TH}, the magnitude of depletion charge per unit area (in C/cm2\text{C/cm}^2) is
Band diagram of a p-type semiconductor showing vacuum level, Ec, Ei, EFS, and Ev levels with energy differences.
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