GATE EC 2020 Set 1 — Question 43

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MCQ+2 / -0.67HardCurrent Gain ParametersBJTElectronic Devices

Electronic Devices → BJT → Current Gain Parameters

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The base of an npnnpn BJT T1 has a linear doping profile NB(x)N_B(x) as shown below. The base of another npnnpn BJT T2 has a uniform doping NBN_B of 1017 cm310^{17} \text{ cm}^{-3}. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of T2 is
Linear doping profile $N_B(x)$ for BJT T1
  1. A.
    approximately 2.0 times that of T1.
  2. B.
    approximately 0.3 times that of T1.
  3. C.
    approximately 2.5 times that of T1.
  4. D.
    approximately 0.7 times that of T1.

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