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GATE EC 2022 Set 1 — Question 16

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MCQ+1 / -0.33MediumGeneration & RecombinationCarrier TransportElectronic DevicesPoisson & Continuity Equations

Electronic Devices → Carrier Transport → Generation & Recombination

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Question

Consider a long rectangular bar of direct bandgap p-type semiconductor. The equilibrium hole density is 1017 cm−310^{17} \text{ cm}^{-3} and the intrinsic carrier concentration is 1010 cm−310^{10} \text{ cm}^{-3}. Electron and hole diffusion lengths are 2μm2 \mu\text{m} and 1μm1 \mu\text{m}, respectively. The left side of the bar (x=0x = 0) is uniformly illuminated with a laser having photon energy greater than the bandgap of the semiconductor. Excess electron-hole pairs are generated ONLY at x=0x = 0 because of the laser. The steady state electron density at x=0x = 0 is 1014 cm−310^{14} \text{ cm}^{-3} due to laser illumination. Under these conditions and ignoring electric field, the closest approximation (among the given options) of the steady state electron density at x=2μmx = 2 \mu\text{m}, is ___________ .
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