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GATE EC 2022 Set 1 — Question 17

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MCQ+1 / -0.33EasyEquilibrium Carrier ConcentrationSemiconductor PhysicsElectronic DevicesFermi Level & Doping

Electronic Devices → Semiconductor Physics → Equilibrium Carrier Concentration

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In a non-degenerate bulk semiconductor with electron density n=1016 cm−3n = 10^{16} \text{ cm}^{-3}, the value of EC−EFn=200 meVE_C - E_{Fn} = 200 \text{ meV}, where ECE_C and EFnE_{Fn} denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV26 \text{ meV} and the intrinsic carrier concentration is 1010 cm−310^{10} \text{ cm}^{-3}. For n=0.5×1016 cm−3n = 0.5 \times 10^{16} \text{ cm}^{-3}, the closest approximation of the value of (EC−EFn)(E_C - E_{Fn}), among the given options, is __________.
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