GATE EC 2023 Set 1 — Question 61

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NAT+2 / -0HardEquilibrium Carrier ConcentrationSemiconductor PhysicsElectronic Devices

Electronic Devices → Semiconductor Physics → Equilibrium Carrier Concentration

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In a semiconductor device, the Fermi-energy level is 0.35 eV0.35\text{ eV} above the valence band energy. The effective density of states in the valence band at T=300 KT = 300\text{ K} is 1×1019 cm31 \times 10^{19}\text{ cm}^{-3}. The thermal equilibrium hole concentration in silicon at 400 K400\text{ K} is ____________ ×1013 cm3\times 10^{13}\text{ cm}^{-3} (rounded off to two decimal places).
Given kTkT at 300 K300\text{ K} is 0.026 eV0.026\text{ eV}.
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