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GATE EC 2024 Set 1 — Question 61

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NAT+2 / -0MediumMOS Capacitor (Accum, Depl, Inv)MOS Capacitor & MOSFETElectronic Devices

Electronic Devices → MOS Capacitor & MOSFET → MOS Capacitor (Accum, Depl, Inv)

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Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of 10−8 C/cm210^{-8} \text{ C/cm}^2 at the oxide-silicon interface, and a metal work function of 4.6 eV. Assume that the relative permittivity of the oxide is 4 and the absolute permittivity of free space is 8.85×10−14 F/cm8.85 \times 10^{-14} \text{ F/cm}. If the flatband voltage is 0 V, the work function of the p-type silicon (in eV, rounded off to two decimal places) is ______.
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