GATE EC 2025 Set 1 — Question 48

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MCQ+2 / -0.67MediumEinstein RelationCarrier TransportElectronic Devices

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The electron mobility μn\mu_n in a non-degenerate germanium semiconductor at 300 K300\text{ K} is 0.38 m2/Vs0.38\text{ m}^2/\text{Vs}.
The electron diffusivity DnD_n at 300 K300\text{ K} (in cm2/s\text{cm}^2/\text{s}, rounded off to the nearest integer) is _______.
(Consider the Boltzmann constant kB=1.38×1023 J/Kk_B = 1.38 \times 10^{-23}\text{ J/K} and the charge of an electron e=1.6×1019 Ce = 1.6 \times 10^{-19}\text{ C}.)
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