GATE EC 2015 Set 3 — Question 19
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Electronic Devices → MOS Capacitor & MOSFET → MOSFET Structure & Operation
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Question
Which one of the following processes is preferred to form the gate dielectric () of MOSFETs?
Correct answer
(D) Dry oxidation
Solution
Dry oxidation is preferred for forming the gate dielectric () of MOSFETs because it produces a higher quality, denser oxide with a lower interface state density compared to wet oxidation. Wet oxidation is faster but results in a less dense oxide with more defects, making it more suitable for thicker field oxides where high dielectric quality is less critical than in the gate region.
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