GATE EC 2015 Set 3 — Question 55

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NAT+2 / -0MediumCurrent Gain ParametersBJTElectronic DevicesBiasing Regions

Electronic Devices → BJT → Biasing Regions

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An npn BJT having reverse saturation current Is=1015I_s = 10^{-15} A is biased in the forward active region with VBE=700V_{BE} = 700 mV. The thermal voltage (VTV_T) is 25 mV and the current gain (β\beta) may vary from 50 to 150 due to manufacturing variations. The maximum emitter current (in μ\mu A) is _______.
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