GATE EC 2016 Set 2 — Question 45

Go beyond PYQs with Success TrackerAI-powered personalised practice and doubt support. Unlimited practice on eligible plans; AI usage limits apply.
MCQ+2 / -0.67MediumMOS Capacitor (Accum, Depl, Inv)MOS Capacitor & MOSFETElectronic Devices

Electronic Devices → MOS Capacitor & MOSFET → MOS Capacitor (Accum, Depl, Inv)

Last updated

Question

A voltage VGV_G is applied across a MOS capacitor with metal gate and p-type silicon substrate at T=300T=300 K. The inversion carrier density (in number of carriers per unit area) for VG=0.8V_G = 0.8 V is 2×1011 cm22 \times 10^{11} \text{ cm}^{-2}. For VG=1.3V_G = 1.3 V, the inversion carrier density is 4×1011 cm24 \times 10^{11} \text{ cm}^{-2}. What is the value of the inversion carrier density for VG=1.8V_G = 1.8 V?
Your answer

Choose one option, then check your answer.

The solution stays hidden until you check.

Continue learning with Success Tracker

A step still unclear? Work through it with support

Use Success Tracker to ask about the reasoning, then try another GATE EC question to check your understanding.

AI-powered practice· Unlimited practice on eligible plans
PYQs with solutions
Attempt available previous-year questions, then compare your reasoning with the worked solution. Coverage varies by stream.
Practice that adapts
Choose a topic, work on weaker areas and bookmark questions to revisit. Your attempts feed your progress tracking.
AI doubt support
Ask follow-up questions about a step or concept while practising, instead of stopping at the final answer.

Unlimited practice is available on eligible plans. Free practice and AI usage have limits; check the current plan allowances before choosing.

This page stays readable without an account. AI responses can be wrong; check them against the solution and source material.

More questions on MOS Capacitor & MOSFET